NEC 1310nm InGaAsP MQW FP PULSED LASER DIODE (110mW)
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION
* HIGH OUTPUT POWER: Pf = 110 mW Typ. at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1%, LONG WAVELENGTH: ëC = 1550 nm ?* INTERNAL THERMOELECTRIC COOLER
* HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE
* SINGLE MODE FIBER PIGTAIL
NEC’s NDL7552P is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment (OTDR).
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Product with one year limit warranty!